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发射极-基极结设计对Si/SiGeHBT的集电极饱和电流、理想系数、阿莱电压及器件开关速度的影响=TheinfluenceOfemitter-basejunctiondesigncocollector,saturationcurrent,ideali...
Emitter-base junction design of Si / SiGeHBT the collector saturation current, the ideal coefficient, A voltage and the device switching speed of the impact = TheinfluenceOmitmitter-basejunctiondesigncocollector, saturationcurrent, ideali ...