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BaTiO3薄膜的铁电性通常会受到界面效应的影响而衰减。提出了使用Ta2O5作为隔离层能够有效抑制界面效应。利用脉冲激光沉积技术,在(100)晶向的SrTiO3衬底上成功制备了BaTiO3/Ta2O5/SrRuO3三层复合薄膜结构。样品的XRD结果表明所得到的薄膜为四角结构的BaTiO3,样品的三层膜结构能够在场发射扫描电镜(FESEM)中清楚观察到。实验所测的电滞回线表明该三层BaTiO3/Ta2O5/SrRuO3薄膜的饱和极化强度、剩余极化强度和矫顽电压分别是58.7μC/cm2,20.6μC/cm2,20.3 V。与两层的BaTiO3/SrRuO3薄膜相比,该BaTiO3/Ta2O5/SrRuO3三层复合薄膜能够表现出更加优异的铁电性。因而,提供了一个能使BaTiO3薄膜的集成变得简单可行的方法,并且可以用作提升相关铁电器件的性能。
The ferroelectricity of BaTiO3 thin films is usually attenuated by the interface effect. It is proposed that the use of Ta2O5 as an isolation layer can effectively suppress the interfacial effect. The BaTiO3 / Ta2O5 / SrRuO3 three-layer composite thin film structure was successfully fabricated on (100) crystal SrTiO3 substrate by pulsed laser deposition. The XRD results of the samples indicate that the obtained film is tetragonal BaTiO3, and the three-layer structure of the sample can be clearly observed in a field emission scanning electron microscope (FESEM). The experimental hysteresis loop shows that the three layers of BaTiO3 / Ta2O5 / SrRuO3 films saturation polarization strength, remanent polarization and coercive voltage were 58.7μC / cm2, 20.6μC / cm2, 20.3V. The BaTiO3 / Ta2O5 / SrRuO3 three-layer composite film can exhibit more excellent ferroelectricity than the two-layer BaTiO3 / SrRuO3 film. Thus, a method is provided that makes the integration of the BaTiO3 thin film simple and feasible, and can be used to enhance the performance of related ferroelectric devices.