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上个世纪50年代,由于锗(Germanium)材料具有较高的载流子(电子和空穴)迁移率,比较容易实现高频性能,因而成为半导体材料的主流。但锗材料制作的半导体器件存在着固有的缺点:温度特性差和由于表面防护性能差而出现的环境(如氧或水气)污染使器件特性变坏。上个世纪50年代末出现的硅平面制造工艺技术开创了以硅材料为主的半导体时代,并逐渐成为集成电路的基本制造工艺沿用至今。
In the 1950s, Germanium materials became the mainstream of semiconductor materials due to their higher carrier (electron and hole) mobility and higher frequency performance. However, semiconductor devices fabricated from germanium have inherent disadvantages: poor temperature characteristics and environmental contamination such as oxygen or moisture due to poor surface protection deteriorate device characteristics. The silicon planar manufacturing process technology that emerged in the late 1950s pioneered the silicon-based semiconductor era and has gradually become the basic manufacturing process of integrated circuits so far.