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在现有工艺条件下通过简单工艺实现大功率GaN基多量子阱全方位反射镜(ODR)发光二极管(LED)的研制,并对试制LED样品进行了光学、电学和色参数三个方面性能测试.测试结果发现,ODR芯片比普通芯片的光强提高了244mcd,极大提高了发光强度;ODRLED光通量、光效、色纯度比普通LED分别提高了6.04%,5.74%,78.64%.ODRLED具有绝对优势是其色温要比普通LED的色温低1804K,明显改善大功率LED的色温缺陷.
In the existing process conditions, a high-power GaN-based MQW omni-directional mirror (ODR) light-emitting diode (LED) was fabricated by a simple process and three aspects of optical, electrical and color parameters Test.The results showed that the light intensity of ODR chip increased by 244mcd, which greatly improved the luminous intensity of ODDRED.The ODRLED luminous flux, luminous efficiency and color purity were increased by 6.04%, 5.74% and 78.64% The absolute advantage is that its color temperature is 1804K lower than the color temperature of ordinary LED, which obviously improves the color temperature defect of high power LED.