论文部分内容阅读
报道透明导电膜不加衬底温度、无需沉积后的退火工艺、用射频磁控溅射沉积氧化铟、锡（ＩＴＯ）薄膜获得电阻率３×１０－４Ω·ｃｍ，在可见光区平均透光率８４％的优良性能．用扫描电子显微镜和Ｘ射线衍射法研究了ＩＴＯ薄膜的结晶形貌和晶体结构
It is reported that the transparent conductive film has no substrate temperature and no post-deposition annealing process. The resistivity of the film is 3 × 10 -4 Ω · cm by RF magnetron sputtering, and the average transmittance in the visible region 84% excellent performance. The morphology and crystal structure of ITO thin films were investigated by scanning electron microscopy and X-ray diffraction