论文部分内容阅读
使用六氯化二硅作为CVD(化学气相沉积)原料,可以低温气相合成SiC或Si_3N_4涂层。此外,在金属成合金气体渗硅时,使用Si_2Cl_6可比用Si_2Cl_4处理温度低50～300℃,可实现处理温度的低温化。六氯化二硅(Si_2Cl_6)是一种沸点为144℃的无色透明液体,业已报道,如果将这种Si_2Cl_6作为CVD原料,与以往使用Si_2Cl_4作原料的方法来比,可在更低的温度下合成SiC或Si_3N涂层。作者最近还发现,在金属或合金表面进行渗硅处理时,作渗剂比用
Using disilicon hexachloride as a raw material for CVD (chemical vapor deposition), SiC or Si_3N_4 coatings can be synthesized in the low temperature gas phase. In addition, the use of Si 2 Cl 6 in the case of metal-to-alloy gas infiltration can be carried out at a temperature lower by 50 to 300 ° C. than that of the Si 2 Cl 4, thereby lowering the temperature of the treatment. Disilicon hexachloride (Si 2 Cl 6) is a colorless and transparent liquid with a boiling point of 144 ° C. It has been reported that if this Si 2 Cl 6 is used as a raw material for CVD, compared with the conventional method of using Si 2 Cl 4 as raw material, Under the synthesis of SiC or Si_3N coating. The authors have also recently found that when applied to the surface of a metal or alloy, the penetration agent is used as a benefit