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在InP衬底上LPE生长时遇到的主要问题之一是当温度高于370℃时,P从InP表面热分解引起表面结构及化学比的变化,在显微镜下观察到许多富In坑,这些坑通过外延层增生,大大影响外延层质量.此外在LPE生长终止推开炉子后石墨舟快速降温过程中InP外延层表面同样出现热分解.因此抑制InP表面热分解是极为重要的.国外曾采用:(1)在H_2生长气氛中加入少量PH_3,(2)InP盖片加上元素P,(3)用In-Sn-P溶液等提供局部P压的方法消除表面热分解.
One of the major problems encountered in the growth of LPE on InP substrates is that when P is thermally decomposed from the InP surface at temperatures above 370 ° C, surface texture and chemical ratio changes are observed and many In rich pits are observed under the microscope Pit through the epitaxial layer proliferation, greatly affect the quality of the epitaxial layer.In addition LPE growth after the open furnace open graphite furnace rapidly cooling down the InP epitaxial layer of the same thermal decomposition of the surface. Therefore, the inhibition of InP surface thermal decomposition is extremely important. : (1) Adding a small amount of PH_3 to H_2 growth atmosphere, (2) InP cover sheet plus elemental P, and (3) Surface partial thermal decomposition using In-Sn-P solution to provide local P pressure.