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在 P 沟与互补 MOS 工艺的基础上,美国因特尔公司与标准微系统公司等厂家开始制造 n 沟硅栅 MOS 器件。硅栅 n 沟 MOS 的优点有:1)由于电子迁移率比空穴高,因此 n 沟器件的速度较 p 沟快器件2-4倍;2)硅栅 n 沟器件减少了寄生电容、条宽与间隔距离,其器件密度比 p 沟工艺
On the basis of P groove and complementary MOS craft, the manufacturer such as Intel of the United States and standard micro system company begins to make n-channel silicon gate MOS device. Silicon gate n-channel MOS has the following advantages: 1) Since the electron mobility is higher than that of the holes, the n-channel device is 2-4 times faster than the p-channel fast device; 2) The silicon gate n-channel device reduces the parasitic capacitance, With the separation distance, the device density than p groove process