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采用离子束辅助电弧离子镀技术在高速钢基体上制备TiN/Cu纳米复合薄膜,考察了基体脉冲负偏压对薄膜成分、结构及硬度的影响。用X射线光电子谱、X射线衍射、扫描电镜、透射电镜和纳米压痕等方法分别测试了薄膜的化学成分、结构、表面形貌、硬度以及弹性模量。结果表明,在氮离子束的轰击作用下,随着脉冲偏压幅值从-100 V增加到-900 V时,薄膜中Cu含量先增加而后略有降低,在1.05%~2.50%(原子比)范围内变化。同时,脉冲偏压对薄膜的结构也有明显影响,在-100 V出现TiN(111)择优取向,当基体偏压增加到-300 V以上时,择优取向改变为TiN(220)择优。薄膜的Cu2p峰均对应纯金属Cu,薄膜的晶粒尺寸约在11~17 nm范围内变化。硬度和弹性模量随着偏压幅值增加而增大,当偏压为-900 V时,薄膜硬度和弹性模量达到最大值,分别为29.92 GPa,476 GPa,对应的铜含量为1.91%。
TiN / Cu nanocomposite films were prepared on high speed steel substrates by ion beam assisted arc ion plating. The influence of substrate negative bias on the composition, structure and hardness of the films was investigated. The chemical composition, structure, surface morphology, hardness and elastic modulus of the films were tested by X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscopy, transmission electron microscopy and nanoindentation. The results show that with the bombardment of nitrogen ion beam, the Cu content increases first and then decreases slightly with the increase of pulse bias voltage from -100 V to -900 V, and decreases slightly at 1.05% ~ 2.50% (atom ratio ) Range. At the same time, the pulsed bias also has a significant effect on the structure of the films. The preferred orientation of TiN (111) appears at -100 V, and the preferred orientation changes to TiN (220) when the substrate bias voltage increases above -300 V. The Cu2p peak of the film corresponds to the pure metal Cu, and the grain size of the film changes about 11 ~ 17 nm. The hardness and elastic modulus increase with the increase of bias voltage. When the bias voltage is -900 V, the film hardness and elastic modulus reach the maximum values of 29.92 GPa and 476 GPa respectively, corresponding to a copper content of 1.91% .