,Improvement of memory characteristics by employing a charge trapping layer with combining bent and

• 作 者: Zhen-Jie Tang Rong Li Xi-Wei Zhang
• 机 构: School of Physics and Electrical Engineering, Anyang Normal University, Anyang 455000, China“,”Schoo
• 出 处: 中国物理B（英文版）
• 发表日期: 2020年4期
• 关键词: nonvolatile memory bent and flat energy bands charge trapping memory capacitor

Designed Zrx Si1-x O2 films with combining bent and flat energy bands are employed as a charge trapping layer for memory capacitors. Compared to a single bent energy band, the bandgap structure with combining bent and flat energy bands exhibits larger memory window, faster program/erase speed, lower charge loss even at 200 °C for 104 s, and wider temperature insensitive regions. The tunneling thickness together with electron recaptured efficiency in the trapping layer, and the balance of two competing electron loss mechanisms in the bent and flat energy band regions collectively contribute to the improved memory characteristics. Therefore, the proposed Zrx Si1-x O2 with combining bent and flat energy bands should be a promising candidate for future nonvolatile memory applications, taking into consideration of the trade-off between the operation speed and retention characteristics.