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一、引言测定金属残余电阻率是一种为控制杂质浓度及其在各种过程中的变化而广泛采用的一种简便方法。在室温下,杂质引起的电子扩散经常远小于声子引起的电子扩散,因此通常是将试样浸入液氦那样的低温槽中测定其残余电阻率。这种测定过程在许多场合有重要局限。当
I. INTRODUCTION Determining the metal residual resistivity is a convenient method that is widely used to control the concentration of impurities and their variation in a variety of processes. At room temperature, the electron diffusion caused by impurities is often much smaller than the electron diffusion caused by phonons, so the residual resistivity is usually measured by immersing the sample in a cryogenic bath such as liquid helium. This measurement process has important limitations on many occasions. when