Modeling Electron Transport in Vertical-SOI NMOSFET by Directly Solving BTE with FEA

• 作 者: TONGJian-nong ZOUXue-cheng SHE
• 机 构: CenterforICDesign,Dept.ofElectron.Sci.andTechnol.,HuazhongUniversityofSci.andTechnol.
• 出 处: 半导体光子学与技术：英文版
• 发表日期: 2004年2期
• 关键词: SOI BTE FEA 电子传输 NMOSFET 有限元分析 Vertical MOSFET SOI BTE FEA

A numerical schemes applicable to the direct solution of Boltzmann transport equation (BTE) in vertical-SOI NMOSFET are investigated by means of the finite element analysis (FEA).The solution gives the electron distribution function,electrostatic potentia