论文部分内容阅读
报道了一个自制的采用计算机控制的自动光荧光(PL)扫描系统.该系统可用于形貌半导体晶片或外延层的PL强度分布,尺寸可大到3英寸,样品可以是Si,GaAs,InP等.它可以用来探测材料中的缺陷及浅能级杂质,显示其分布.PL对于杂质识别和缺陷分布的形貌特别灵敏.文中列举和讨论了用本PL扫描系统对Si和GaAs所获得的一些光谱和形貌的信息.实验证明该系统可用作为一个简单、无接触然而却是灵敏的表征手段,可用于评估半导体基片近表面层的均匀性,也适用于器件表征.
A self-contained, computer-controlled automated light-emitting (PL) scanning system is reported for PL intensity profiles of topographic semiconductor wafers or epitaxial layers up to 3 inches in size and samples of Si, GaAs, InP, etc. . It can be used to detect defects in materials and shallow level impurities, showing its distribution.PL for impurity recognition and defect distribution of the morphology is particularly sensitive.This paper lists and discusses the use of this PL scanning system for Si and GaAs obtained Some spectra and morphologies.Experiments show that the system can be used as a simple, non-contact but sensitive method for characterization of the near-surface layer of semiconductor substrates and also for device characterization.