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利用 X射线光电子能谱仪 (XPS)对 MoS2溅射膜掺杂 Sb2O3/Au的抗氧化性能进行了研究。结果表明， Sb2O3/Au使得 MoS2溅射膜的结构变得更为致密。同时还改变了 MoSx的化学计量配比，增强了 MoS2溅射膜的抗氧化性能。通过掺杂的 MoS2溅射膜的初始氧化以及在潮湿环境中的氧化只发生在膜表面的 2～ 3个分子层，使得内层被保护得相当好。掺杂是解决 MoS2溅射膜氧化问题的一种行之有效的方法。
The oxidation resistance of Sb2O3 / Au doped MoS2 sputtering films was investigated by X-ray photoelectron spectroscopy (XPS). The results show that Sb2O3 / Au makes MoS2 sputtering film structure becomes more compact. MoSx also changed the stoichiometric ratio, enhanced MoS2 sputtering film oxidation resistance. Initial oxidation by a doped MoS2 sputtered film and oxidation in humid environments only occur at 2-3 molecular layers on the surface of the film so that the inner layer is protected quite well. Doping is an effective method to solve the oxidation problem of MoS2 sputtering film.