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开发了一种使用汞敏化光化学气相淀积的新型Si外延生长技术.通过低压水银灯(1849,2537(?))辐照Si_2H_6+SiH_2F_2+H_2混合气体,在100～300℃条件下,在(100)Si衬底上生长出外延薄膜(300～8000(?)).把生长速率作为衬底温度倒数的函数来画曲线,发现所表示的激活能数值比较小,为0.18eV对于在200℃,250℃和300℃生产的薄膜借助于反射式高能电子衍射观察了表面结构,结果表明在(100)面具有良好的条纹图形.
A new Si epitaxial growth technique using mercury-sensitized photochemical vapor deposition has been developed.A mixture of Si_2H_6 + SiH_2F_2 + H_2 gas was irradiated by low pressure mercury lamp (1849, 2537 (?)) At 100-300 ℃, 100) Si substrate (300-8000 (?)). Growth curves were plotted as a function of the reciprocal of the substrate temperature and found to have a small activation energy value of 0.18 eV. , 250 ° C and 300 ° C, the surface structure was observed by means of reflection-type high-energy electron diffraction. As a result, it was found that the (100) plane had a good fringe pattern.