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采用射频磁控溅射法沉积制备了(002)ZnO/Al/Si复合结构。研究了Al薄膜对(002)ZnO/Al/Si复合结构的声表面波器件(SAWD)基片性能影响以及当ZnO薄膜厚度一定时的Al膜最佳厚度。采用X射线衍射(XRD)对Al和ZnO薄膜进行了结构表征,采用扫描电镜(SEM)对ZnO薄膜进行表面形貌表征,并从薄膜生长机理角度进行了分析。结果表明,加Al薄膜有利于ZnO薄膜按(002)择优取向生长,并且ZnO薄膜的结晶性能提高;与(002)ZnO/Si结构基片相比,当Al薄膜厚为100nm时,(002)ZnO/Al/Si结构中ZnO薄膜的机电耦合系数提高了65%。
The (002) ZnO / Al / Si composite structure was deposited by RF magnetron sputtering. The effect of Al film on the performance of (002) ZnO / Al / Si composite surface acoustic wave device (SAWD) substrate and the optimum thickness of Al film when ZnO film thickness is constant are studied. The structure of Al and ZnO thin films was characterized by X-ray diffraction (XRD). The surface morphology of ZnO thin films was characterized by scanning electron microscopy (SEM) and the growth mechanism of thin films was analyzed. The results show that the addition of Al thin film is beneficial to the growth of (002) preferred orientation of ZnO thin films and the crystallization of ZnO thin films. Compared with (002) ZnO / Si structure substrate, when the Al thin film thickness is 100 nm, The electromechanical coupling coefficient of ZnO films in ZnO / Al / Si structure increased by 65%.