Effect of working pressure and temperature on ZnO film deposited on free-standing diamond substrates

• 作 者: 赵平 夏义本 王林军 刘健敏 徐闰 彭鸿雁 史伟民
• 机 构: School of Materials Science and Engineering Shanghai University,Shanghai 200072,China,School of Mate
• 出 处: Transactions of Nonferrous Metals Society of China
• 发表日期: 2006年S1期
• 关键词: diamond sputtering annealing nucleation roughness magnetron spacing crystalline

The structure characteristic and electric performance of ZnO film deposited on nucleation side of free-standing diamond substrates under different heating temperatures (Th) of substrate and working pressures (p) were studied. The structure of the ZnO films tested by X-ray diffraction shows that ZnO film of high c-axis orientation is deposited on the nucleation side of free-standing diamond substrate which is extremely smooth when Th=250 ℃ and p=0.4 Pa. After annealing at 480 ℃ in N2 atmosphere, the SEM and the AFM analyses demonstrate that the c-axis orientation of ZnO film is obviously enhanced. The resistivity of ZnO films also increases up to 8×105 ■·cm which is observed by I?V test.

The structure characteristic and electric performance of ZnO film deposited on nucleation side of free-standing diamond substrates under different heating temperatures (Th) of substrate and working pressures (p) were studied. The structure of the ZnO films tested by X-ray diffraction shows that ZnO film of high c-axis orientation is deposited on the nucleation side of free-standing diamond substrate which is extremely smooth when Th = 250 ° C. and p = 0.4 Pa. After annealing at 480 ° C. in N2 atmosphere, the SEM and the AFM analyses demonstrate that the c-axis orientation of ZnO film is obviously enhanced. The resistivity of ZnO films also increases up to 8 × 105 ■ · cm which is observed by I? V test.