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采用KOH溶液表面处理工艺制备得到了128×1线列日盲AlGaN紫外探测器,器件的反偏暗电流为6.88×10-9A(-8 V时),比未采用此项工艺制备得到的器件的暗电流减小近103倍。元素深度分布俄歇电子谱(AES)等测试结果分析表明,采用这种表面处理工艺可以有效地去除干法刻蚀后材料表面的N空位、刻蚀生成物及自然氧化物,减小了界面态密度,改善了电流-电压特性,减小了反偏暗电流。利用传输线模型TLM计算得到了Ti/Al/Ti/Au金属电极与高Al组分n-Al0.65Ga0.35N材料间的接触电阻率为8.35×10-3Ωcm2。
The 128 × 1 line solar blind AlGaN detector was prepared by KOH solution surface treatment. The reverse bias dark current of the device was 6.88 × 10 -9 A (-8 V), which was higher than that of the device without this process The dark current is reduced by nearly 103 times. Element depth distribution Auger electron spectroscopy (AES) test results show that the use of this surface treatment process can effectively remove the surface after dry etching of N vacancies, etching products and natural oxides, reducing the interface The density of states improves the current-voltage characteristics and reduces the reverse bias dark current. The contact resistivity of the Ti / Al / Ti / Au metal electrode and the high-Al composition n-Al0.65Ga0.35N was calculated using transmission line model TLM as 8.35 × 10-3Ωcm2.