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用化学腐蚀方法研究了磁场中布里奇更法生长碲镉汞晶体的位错和亚晶界，在施加磁场的样品中观察到分布较为均匀的位错和较少的亚晶界，这可能是由于在生长过程中施加了磁场对组分分凝和组分过冷起到了一定的抑制作用。
The dislocations and the subgrain boundaries of the more uniformly grown CdTe crystal in Bridgman magnetic field were studied by chemical etching. Dislocations distributed uniformly and few subgrain boundaries were observed in the magnetic field-applied samples. Is due to the application of a magnetic field in the growth process of component condensation and component cooling played a certain degree of inhibition.