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The evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistor (HEMT) by structure function method is proposed in this paper.The evaluation is based on the transient heating measurement of the AlGaN/GaN HEMT by pulsed electrical temperature sensitive parameter method.The extracted chip-level and package-level thermal resistances of the packaged multi-finger AlGaN/GaN HEMT with 400-μm SiC substrate are 22.5 K/W and 7.2 K/W respectively,which provides a non-invasive method to evaluate the chip-level thermal resistance of packaged AlGaN/GaN HEMTs.It is also experimentally proved that the extraction of the chiplevel thermal resistance by this proposed method is not influenced by package form of the tested device and temperature boundary condition of measurement stage.
The evaluation of thermal resistance constitution for packaged AlGaN / GaN high electron mobility transistor (HEMT) by structure function method is proposed in this paper. The evaluation is based on the transient heating measurement of the AlGaN / GaN HEMT by pulsed electrical temperature sensitive parameter method . The extracted chip-level and package-level thermal resistances of the packaged multi-finger AlGaN / GaN HEMTs with 400-μm SiC substrates are 22.5 K / W and 7.2 K / W respectively, which provides a non-invasive method to evaluate the chip-level thermal resistance of packaged AlGaN / GaN HEMTs. It is also experimentally verified that the extraction of the chiplevel thermal resistance by this proposed method is not affected by package form of the tested device and temperature boundary condition of measurement stage.