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本文分别采用电子束蒸发和磁控溅射的方法在n型掺杂(n-Si:H)膜上沉积了不同掺杂量和不同厚度的掺Al的Zn O(Zn O:Al)薄膜。通过I-V测试仪测试了两种方法制备的Zn O:Al薄膜与n-Si:H膜的接触特性,结果显示对于电子束蒸发制备的Zn O:Al薄膜,当掺杂浓度为2.5%时n-a-Si:H/Zn O:Al的接触电阻最小,在厚度变化不大的情况下,n-a-Si:H/Zn O:Al的接触电阻随着Zn O:Al厚度的增加而增大。而磁控溅射制备的Zn O:Al薄膜,n-a-Si:H/Zn O:Al的接触电阻随着厚度的增加而不断减小。
In this paper, Al-doped Zn O (Zn O: Al) films with different doping amount and thickness were deposited on n-type doped (n-Si: H) films by electron beam evaporation and magnetron sputtering respectively. The contact characteristics of Zn O: Al films and n-Si: H films prepared by the two methods were tested by IV tester. The results show that for the Zn O: Al films prepared by electron beam evaporation, when the doping concentration is 2.5% -Si: H / Zn O: Al, the contact resistance of na-Si: H / Zn O: Al increases with the increase of Zn O: Al thickness. However, the contact resistance of Zn-O: Al films prepared by magnetron sputtering and n-a-Si: H / ZnO: Al decreases with the increase of the thickness.