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本文描述了一种数值分析方法,计算了集成光学中电光器件电极的电场分布。在电极无限薄的假设条件下,把数值分析法计算的结果同保角变换法的结果进行了比较,并讨论了电极厚度和缓冲层对电场以及特征参量的影响。计算结果表明电极厚度对电场分布影响较小,但特征阻抗和有效介电常数随电极厚度增加明显减小。而且使用缓冲层使波导的有效深度增加,电场强度减小,特征阻抗和有效介电常数都发生很大变化。利用这些特性可对集成光学电光器件的电极进行优化设计。
This paper describes a numerical analysis method that calculates the electric field distribution in the electrodes of electro-optic devices in integrated optics. Under the condition of infinite electrode thickness, the results of numerical analysis are compared with the results of conformal mapping. The effects of electrode thickness and buffer layer on electric field and characteristic parameters are also discussed. The calculated results show that the thickness of the electrode has little influence on the electric field distribution, but the characteristic impedance and the effective dielectric constant decrease with the increase of the electrode thickness. Moreover, the buffer layer increases the effective depth of the waveguide, decreases the electric field strength, and changes the characteristic impedance and the effective dielectric constant greatly. Use these features to optimize the design of electrodes for integrated optoelectronic devices.