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该文研究了真空磁过滤弧沉积方法制备的非晶金石薄膜 (a-DF)的电子场发射性能 ,SP2 键含量不同的薄膜的场发射性能有很大的差异 ,SP2 键含量越高 ,阈值电场越小 ,发射电流越大 ,同时失效率也较高。SP2 键含量为 6 .5% ,2 0 % ,40 %的薄膜 ,其阈值电场分别为2 .7V/ μm,1 .5V/ μm ,0 .7V/ μm ,远小于金属和硅尖锥的阈值电场。所有样品的发射点均为随机的点状分布。
In this paper, the electron field emission properties of a-DF prepared by vacuum magnetic filtration arc deposition are studied. The field emission properties of films with different content of SP2 bond are greatly different. The higher the content of SP2, the higher the threshold value The smaller the electric field, the larger the emission current and the higher the failure rate. The threshold electric fields of the films with SP2 key content of 6.5%, 20% and 40% are respectively 2.7V / μm, 1.5V / μm and 0.7V / μm, which are much lower than those of the metal and silicon spikes electric field. The launch points for all samples were randomly spotted.