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通常硅杯式压力传感器是采用IC技术在n型硅片表面形成四个P型电阻而联成惠斯登电桥,在理想情况下四个扩散电阻电参数和温度特性完全一致时,联成的电桥在无压力作用时输出为零。但是,在实际制造过程中,由于工艺上的原因,制造出来的四个扩散电阻的电学和热学参数总是存在一定的差异,致使扩散硅式压力传感器存在零位漂移和零位失调。目前国内采用串、并联电阻的方法解决这个问题,这种方法虽然有一定的效果,但仍存在着增加功耗、补偿精度不高、可靠性差的问题。
Usually silicon cup pressure sensor is the use of IC technology in the n-type silicon surface of the formation of four P-type resistors connected to the Wheatstone bridge, in the ideal case of four diffusion resistance electrical parameters and temperature characteristics are exactly the same The bridge outputs zero when no pressure is applied. However, in the actual manufacturing process, there are always some differences in the electrical and thermal parameters of the four diffused resistors fabricated due to the process, resulting in zero drift and zero offset of the diffused silicon pressure sensor. At present, the method of using series and parallel resistors solves this problem. Although this method has certain effect, there still exists the problem of increasing power consumption, low compensation accuracy and poor reliability.