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A passively Q-switched mode-locked Nd:GdYVO4 laser is successfully demonstrated by using a piece of GaAs crystal grown at low temperature as the passively saturated absorber and the output coupler. Fundamental properties of the Nd: GdYVO4 laser are investigated. The maximum average output power of 3.5 W is obtained by using plainsphere when the incident pumping power is 10 W,which corresponds to an optical-optical coversion efficiency of 35%. The threshold power for the Q-switching mode-locked is 1.2 W. The maximum average output power of 1.72 W is obtained by using GaAs when the incident pumping power is 10 W,mode-locked pulse train with a repetition rate of ～113 MHz is achieved. At the incident laser pumping power of 7 W,the modulation depth is 100%.
A passively Q-switched mode-locked Nd: GdYVO4 laser is successfully demonstrated by using a piece of GaAs crystal grown at low temperature as the passively saturated absorber and the output coupler. Fundamental properties of the Nd: GdYVO4 laser are investigated. The maximum average output power of 3.5 W is obtained by using plainsphere when the incident pumping power is 10 W, which corresponds to an optical-optical coversion efficiency of 35%. The threshold power for the Q-switching mode-locked is 1.2 W. The maximum average output power of 1.72 W is obtained by using GaAs when the incident pumping power is 10 W, mode-locked pulse train with a repetition rate of ~ 113 MHz is achieved. At the incident laser pumping power of 7 W, the modulation depth is 100 %.