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用溶胶凝胶浸渍技术在三氧化二铝基片上制备了纯和 (m(Pt) :m(WO3 ) =0 .3% )铂搀杂的三氧化钨膜 .测量和比较了 4 5 0 - 85 0℃温度范围内不同退火温度的纯和铂搀杂三氧化钨膜的电阻 ,理想的退火温度为 6 5 0℃ .纯三氧化钨膜的理想工作温度为 35 0℃ ,对 4 0× 10 - 6一氧化氮的灵敏度为 8.9;铂搀杂三氧化钨膜的理想工作温度为 2 5 0℃ ,对 4 0× 10 - 6一氧化氮的灵敏度为 114.0 .实验结果显示溶胶凝胶制备的铂搀杂三氧化钨膜对一氧化氮具有高的灵敏度 ,低的工作温度 ,快速和可重复的响应
The pure and (m (Pt): m (WO3) = 0.3%) platinum doped tungsten trioxide films were prepared on alumina substrate by sol-gel impregnation technique. 0 ℃ temperature range of different annealing temperature of pure and platinum doped tungsten trioxide film resistance, the ideal annealing temperature is 650 ℃ .The ideal working temperature of the pure tungsten trioxide film is 35 0 ℃, 4 0 × 10 - 6 nitric oxide sensitivity of 8.9; platinum doped tungsten trioxide film ideal working temperature of 250 ℃, 4 0 × 10 - 6 nitric oxide sensitivity of 114.0. The experimental results show that the sol gel prepared by platinum doping Tungsten trioxide film has high sensitivity to nitric oxide, low working temperature, fast and repeatable response