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The solvo-thermal technique is used for the synthesis of Te 4 (I).The crystal structure has been determined by single crystal X-ray diffraction techniques.The crystal belongs to the monoclinic, space group p 2 1/ c with unit cell: a =0.846 1(1), b =1.565 3(2), c =1.426 9(2) nm, α =90°, β =91.37(1) (3)°, γ =90°, V =1.889 3(4) nm 3,and Z =4.The results show that the structure contains a linear chain Zintl anion, 2- and a complex cation, 2+ . Optical studies have been performed on the powder sample of I, suggesting that the compound is a semiconductor with a band gap of 0.73 eV. The semiconductor properties for MnQ 2(Q=S,Se,Te) and Te 4 have been discussed by molecular orbital theory.
The solvo-thermal technique is used for the synthesis of Te 4 (I). The crystal structure has been determined by single crystal X-ray diffraction techniques. The crystal belongs to the monoclinic, space group p 2 1 / c with unit cell: a = 0.846 1 (1), b = 1.565 3 (2), c = 1.426 9 (2) nm, α = 90 °, β = 91.37 (1) (3) °, γ = 90 °, V = (4) nm 3, and Z = 4. The results show that the structure contains a linear chain Zintl anion, 2- and a complex cation, 2+. Optical studies have been performed on the powder sample of I, suggesting that the compound The semiconductor properties for MnQ 2 (Q = S, Se, Te) and Te 4 have been discussed by molecular orbital theory.