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提出了一种SOILDMOS大信号等效电路模型,并给出了功率增益和输入阻抗表达式.基于制备的深亚微米SOI射频LDMOS,测试了功率增益和功率附加效率.深入研究了SOILDMOS功率特性与栅长,单指宽度,工作电压和频率之间关系.栅长由0.5μm减到0.35μm时,小信号功率增益增加44%,功率附加效率峰值增加9%.单指宽度由20μm增加到40μm,600μm/0.5μm器件小信号功率增益降低23%,功率附加效率峰值降低9.3%.漏端电压由3V增加到5V,600μm/0.35μm器件小信号功率增益增加13%,功率附加效率峰值增加5.5%.频率由2.5GHz提高到3.0GHz,射频功率SOILDMOS小信号功率增益降低15%,功率附加效率峰值降低4.5%.
A SOILDMOS large-signal equivalent circuit model is proposed and the expression of power gain and input impedance is given.Based on the prepared deep sub-micron SOI radio-frequency LDMOS, the power gain and power added efficiency are tested.The effects of SOILDMOS power characteristics and Gate length, single-finger width, operating voltage and frequency.When the gate length is reduced from 0.5μm to 0.35μm, the small signal power gain increases 44% and the peak power added efficiency increases 9% .The single finger width increases from 20μm to 40μm , The power gain of 600μm / 0.5μm device is reduced by 23% and the peak value of power added efficiency is reduced by 9.3% .The drain voltage is increased from 3V to 5V, the power gain of small signal of 600μm / 0.35μm device is increased by 13% and the power added efficiency peak is increased by 5.5% The frequency is increased from 2.5GHz to 3.0GHz, the power gain of small power of SOILDMOS with RF power is reduced by 15% and the peak of power added efficiency is reduced by 4.5%.