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The effect of quantum well number on the quantum efficiency and temperature characteristics of InGaN/GaN laser diodes(LDs) is determined and investigated.The 3-nm-thick In0.13Ga0.87N wells and two 6-nm-thick GaN barriers are selected as an active region for Fabry-Perot(FP) cavity waveguide edge emitting LD.The internal quantum efficiency and internal optical loss coefficient are extracted through the simulation software for single,double,and triple InGaN/GaN quantum wells.The effects of device temperature on the laser threshold current,external differential quantum efficiency(DQE),and output wavelength are also investigated.The external quantum efficiency and characteristic temperature are improved significantly when the quantum well number is two.It is indicated that the laser structures with many quantum wells will suffer from the inhomogeneity of the carrier density within the quantum well itself which affects the LD performance.
The effect of quantum well number on the quantum efficiency and temperature characteristics of InGaN / GaN laser diodes (LDs) is determined and investigated. 3-nm-thick In0.13Ga0.87N wells and two 6-nm-thick GaN barriers are selected as an active region for Fabry-Perot (FP) cavity waveguide edge emitting LD. The internal quantum efficiency and internal optical loss coefficient are extracted through the simulation software for single, double, and triple InGaN / GaN quantum wells. The effects of device temperature on the laser threshold current, external differential quantum efficiency (DQE), and output wavelength are also investigated. external quantum efficiency and characteristic temperature are improved significantly when the quantum well number is two. It is indicated that the laser structures with many quantum wells will suffer from the inhomogeneity of the carrier density within the quantum well itself which affects the LD performance.