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测量了用液相外延技术制备的(P)Pb_(0.8)Sn_(0.2) Te-(n)PbTe异质结二极管的电容-电压特性,据此计算了结区附近PbTe外延层中的净施主浓度分布。发现零偏压下PbTe外延层中空间电荷区边界的净施主浓度(N_o)强烈地依赖于液相外延的生长温度(T_(ep)),认为它是由于液相外延生长过程中缺陷的互扩散所造成。
The capacitance-voltage characteristics of (P) Pb_ (0.8) Sn_ (0.2) Te- (n) PbTe heterojunction diode prepared by liquid-phase epitaxy were measured. The net donor concentration distributed. It is found that the net donor concentration (N_o) at the boundary of the space charge region in the PbTe epitaxial layer under zero bias strongly depends on the growth temperature (T ep ep) of the liquid phase epitaxy and is believed to be due to the interaction between defects in liquid phase epitaxy Caused by proliferation