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序言最近几年,为适应大规模集成电路的需要,都在积极开展多层布线技术的研制工作,提出的方案很多。比较实用的是用A1做引线。中间介质的制备,一种方法是用热生长(或溅射)生成的SiO_2或Si_3N_4;另一种方法是用阳极氧化生成的Al_2O_3再加上热生长的SiO_2双层介质。开始,我们用热生长SiO_2做多层布线的介质。为了克服在制备过程中出现的困难,我们又提出用阳极氧化生成Al_2O_3再加上热生长的SiO_2双层介质做多层布
Preamble In recent years, in order to meet the needs of large-scale integrated circuits, are actively developing multi-layer wiring technology, proposed a lot of programs. More practical is to do with A1 lead. One method is to produce SiO 2 or Si 3 N 4 by thermal growth (or sputtering) and the other method is to use Al 2 O 3 generated by anodization plus a thermally grown SiO 2 double layer medium. In the beginning, we used the hot growth SiO 2 to make multilayer wiring medium. In order to overcome the difficulties in the preparation process, we also proposed the use of anodic oxidation of Al 2 O 3 plus thermal growth of SiO 2 double-layer medium to do multilayer