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新的NMOS(N型金属氧化物半导体)外延沉积工艺对下一代移动处理器芯片内更快的晶体管至关重要应用材料公司在Applied Centura RP Epi系统设备上新开发了一套NMOS晶体管应用技术,继续保持其在外延技术方面十年来的领先地位。该应用技术的开发符合行业在20纳米节点时将外延沉积从PMOS(P型金属氧化物半导体)向NMOS(N型金属氧化物半导体)晶体管延伸的趋势,推动芯片制造商打造出更快的终端,提供下一代移动计算能力。NMOS外延可将晶体管速度提高半个器件节点,同时不增加关闭状态下的功耗“外延是高性能晶体管的基本组成部分,速度提升相当于缩放半个器件节
New NMOS (N-Type Metal Oxide Semiconductor) Epitaxial Deposition Process Is Critical to Faster Transistors in Next-Generation Mobile Processor Chip Applied Materials Inc. has developed a new set of NMOS transistor applications on the Applied Centura RP Epi system device, Continue to maintain its leading position in epitaxial technology over the past decade. The development of this application technology is in line with the industry trend of extending epitaxial deposition from PMOS (P-type metal-oxide-semiconductor) to NMOS (N-type metal-oxide semiconductor) transistors at 20-nm nodes, pushing chip makers to create faster terminals , Providing the next generation of mobile computing power. NMOS epitaxy can increase transistor speed by half a device node without increasing power consumption in the off state. ”Epitaxy is an essential part of a high-performance transistor and speeds up to half the scaling of a device section