【摘 要】
：
Light emission by inelastic tunneling (LEIT) from a metal-insulator-metal tunnel junction is an ultrafast emission process.It is a promising platform for ultrafast transduction from electrical signal to optical signal on integrated circuits.However,existi
【机 构】
：
School of Physics and Technology,Center for Nanoscience and Nanotechnology,and Key Laboratory of Art
论文部分内容阅读
Light emission by inelastic tunneling (LEIT) from a metal-insulator-metal tunnel junction is an ultrafast emission process.It is a promising platform for ultrafast transduction from electrical signal to optical signal on integrated circuits.However,existing procedures of fabricating LEIT devices usually involve both top-down and bottom-up techniques,which reduces its compatibility with the modem microfabrication streamline and limits its potential applications in industrial scale-up.Here in this work,we lift these restrictions by using a multilayer insulator grown by atomic layer deposition as the tunnel barrier.For the first time,we fabricate an LEIT device fully by microfabrication techniques and show a stable performance under ambient conditions.Uniform electroluminescence is observed over the entire active region,with the emission spectrum shaped by metallic grating plasmons.The introduction of a multilayer insulator into the LEIT can pro-vide an additional degree of freedom for engineering the energy band landscape of the tunnel barrier.The presented scheme of preparing a stable ultrathin tunnel barrier may also find some applications in a wide range of integrated optoelectronic devices.
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