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Rf sputtering in an Ar discharge of a SiC target has been used to depositβ-SiC films on Si-(111) substrates. XRD and infrared absorption spectra measurements were used to characterize the films. The results show that the deposited films are (111)-orientedβ-SiC films, and a C rich buffer layer formed between the substrate and SiC films when the substrate temperature is higher than 800℃. IR and XRD results of an annealing process at 800℃ in H2 atmosphere, indicate that the crystalline quality is determined mainly by the substrate temperature during the film growth, and the annealing process can improve the quality of Si/SiC interface. Higher substrate temperature leads to better quality of crystalline structure and lower quality of SiC/Si interfaces. Combined with. an annealing process we obtained SiC films with very good quality of both crystalline and SiC/Si interface.
Rf sputtering in an Ar discharge of a SiC target has been used to deposit β-SiC films on Si- (111) substrates. XRD and infrared absorption spectra measurements were used to characterize the films. The results show that the deposited films are (111) -oriented β-SiC films, and a C rich buffer layer formed between the substrate and SiC films when the substrate temperature is higher than 800 ° C. IR and XRD results of an annealing process at 800 ° C. in H2 atmosphere, indicate that the crystalline quality is determined mainly by the substrate temperature during the film growth, and the annealing process can improve the quality of Si / SiC interface. Higher substrate temperature leads to better quality of crystalline structure and lower quality of SiC / Si interfaces. we obtained SiC films with very good quality of both crystalline and SiC / Si interface.