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采用量子动力学模型研究单材料和三材料的石墨烯纳米条带场效应管(GNRFETs)在不同掺杂情况下的弹道输运特性,模型基于非平衡格林函数方程(NEGF)以及自洽的泊松方程的量子数值解.结果证明:三材料线性掺杂的石墨烯纳米条带场效应管(TL-GNRFET)不仅能够有效地抑制短沟道效应(SCE)和漏极势垒降低效应(DIBL),而且相对于其它几种结构而言,它有更好的亚阈值斜率以及更高的开关电流比.另外,还研究了非对称栅结构对石墨烯场效应管的影响,结果表明,当上栅和下栅同时向源端移动的时候,可以改善器件的电流开关比.
The quantum mechanical model was used to study the ballistic transport properties of GNRFETs under different doping conditions. The model was based on the non-equilibrium Green’s function equation (NEGF) The results show that the TL-GNRFET doped with three materials can not only effectively suppress the short-channel effect (SCE) and drain barrier reduction effect (DIBL ), And it has better sub-threshold slope and higher switching current ratio than other structures.In addition, the influence of asymmetric gate structure on the field effect transistor of graphene was also studied. The results show that when the When the upper gate and the lower gate move to the source simultaneously, the current switching ratio of the device can be improved.