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A series of Zn_(1-x)Cd_xO thin films have been fabricated on sapphire by pulsed-laser deposition(PLD), successfully. To investigate the effect of Cd concentration on structural and optical properties of Zn_(1-x)Cd_xO films, x-ray diffraction(XRD),ultraviolet-visible spectroscopy(UV-vis), and x-ray photoelectron spectroscopy(XPS) are employed to characterize the films in detail. The XRD pattern indicates that the Zn_(1-x)Cd_xO thin films have high single-orientation of the c axis. The energy bandgap values of ZnCdO thin films decrease from 3.26 eV to 2.98 eV with the increasing Cd concentration(x)according to the(αhν)~2–hν curve. Furthermore, the band offsets of Zn_(1-x)Cd_xO/ZnO heterojunctions are determinated by XPS, indicating that a type-I alignment takes place at the interface and the value of band offset could be tuned by adjusting the Cd concentration.
A series of Zn 1-x Cd xx thin films have been fabricated on sapphire by pulsed-laser deposition (PLD), successfully. To investigate the effect of Cd concentration on structural and optical properties of Zn 1- (1-x) x-ray diffraction (XRD), ultraviolet-visible spectroscopy (UV-vis), and x-ray photoelectron spectroscopy (XPS) are employed to characterize the films in detail. The XRD pattern indicates that the Zn_ (1-x) Cd_xO thin The energy bandgap values of ZnCdO thin films decrease from 3.26 eV to 2.98 eV with the increasing Cd concentration (x) according to the (αhν) ~ 2-hν curve. Furthermore, the band offsets of Zn_ (1-x) Cd_xO / ZnO heterojunctions are determined by XPS, indicating that a type-I alignment takes place at the interface and the value of band offset could be tuned by adjusting the Cd concentration.