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本文在大量实验的基础上,阐述利用三氧化二硼做液体封闭剂,合成和生长砷化镓单晶的工艺技术及其原理,特别是讨论了在晶体生长时,降低砷化镓位错的途径。例如,通过缩细颈,布置合理的温场,控制晶体的生长速率和减少机械振动等方法。实验证明,这些方法是合理的。文章还给出一些实验数据和照片。
Based on a large number of experiments, this paper describes the technology and principle of synthesizing and growing gallium arsenide single crystals by using boron trioxide as liquid sealant. In particular, the dissertation deals with the technology of reducing gallium arsenide dislocations during crystal growth, way. For example, by narrow neck, the layout of a reasonable temperature field, control the growth rate of the crystal and reduce mechanical vibration and other methods. Experiments show that these methods are reasonable. The article also gives some experimental data and photos.