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研究了在软击穿后 MOS晶体管特性的退化 .在晶体管上加均匀的电压应力直到软击穿发生的过程中监控晶体管的参数 .在软击穿后 ,输出特性和转移特性只有小的改变 .在软击穿发生时 ,漏端的电流和域值电压的退化是连续变化的 .但是 ,在软击穿时栅漏电流突然有大量的增加 .对软击穿后的栅漏电流增量的分析表明 ,软击穿后的电流机制是 FN隧穿 ,这是软击穿引起的氧化物的势垒高度降低造成的 .
The degradation of MOS transistor characteristics after soft breakdown was investigated, and uniform voltage stress was applied to the transistor until the transistor parameters were monitored during soft breakdown. After soft breakdown, the output and transfer characteristics changed only slightly. At the time of soft breakdown, the degradation of the current at the drain terminal and the threshold voltage are continuously changing, however, there is a sudden large increase in the gate-drain current during soft breakdown. An analysis of the increment of gate-drain current after soft breakdown It is shown that the current mechanism after soft breakdown is FN tunneling, which is caused by the decrease of the barrier height of the oxide due to soft breakdown.