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在Ａｌ２Ｏ３（０００１）衬底上用ＭＯＣＶＤ（金属有机物气相沉积）方法进行了ＧａＮ的外延生长，通过Ｘ射线衍射（同步辐射源）研究了ＧａＮ和Ａｌ２Ｏ３（０００１）的匹配关系。结果表明，经充分氮化的衬底上，ＧａＮ以单一的匹配方式沿［０００１］方向生长；在Ａｌ２Ｏ３（０００１）衬底未经氮化或氮化不充分时，不同程度地出现了其它三种绕〈１１２０〉晶带轴倾斜一定角度的匹配位向。指出了ＧａＮ／Ａｌ２Ｏ３（０００１）的几种匹配方式的晶体学规律。ＧａＮ绕〈１１２０〉晶带轴倾斜的匹配方式是其外延生长过程中降低和Ａｌ２Ｏ３（０００１）的晶格失配、释放界面应变的重要机制之一。
The epitaxial growth of GaN was carried out by MOCVD on Al2O3 (0001) substrate. The matching between GaN and Al2O3 (0001) was investigated by X-ray diffraction (synchrotron radiation source). The results show that GaN grows along the [0001] direction in a single matching manner on the fully nitrided substrate. When the Al 2 O 3 (0001) substrate is not fully nitrided or nitrided sufficiently, the other three Species around the <1120> crystal axis tilted at an angle to match the bit. The crystal regularities of several matching modes of GaN / Al2O3 (0001) are pointed out. The matching of the tilt around the <1120> band axis of GaN is one of the important mechanisms for reducing the lattice mismatch with Al2O3 (0001) during the epitaxial growth and releasing the interface strain.