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采用磁束缚电感耦合等离子体溅射沉积法在不同的氧气分压下制备了Zn0.95Co0.05O和Zn0.94Co0.05Al0.01O薄膜.利用X射线吸收精细结构技术对薄膜O-K,Co-K和Co-L边进行了局域结构研究,结果表明:Co2+取代了四配位晶体场中的Zn2+而未改变ZnO的六方纤锌矿结构,高真空条件下制备的薄膜具有较多的氧空位缺陷.利用共振非弹性X射线散射研究了薄膜Co-L和O-K边电荷转移情况,结果表明:Zn0.94Co0.05Al0.01O薄膜中Co-3d与传导电子之间的电荷转移强度明显强于Zn0.95Co0.05O薄膜,在较低氧气分压下制备的Zn0.95Co0.05O薄膜的电荷转移强度强于高氧气分压下制备的薄膜.
The Zn0.95Co0.05O and Zn0.94Co0.05Al0.01O thin films were prepared by magnetic confinement inductively coupled plasma-jet deposition method under different partial pressure of oxygen.The effects of OK, Co-K and Co-L. The results showed that Co2 + replaced the Zn2 + in the four-coordinated crystal field without changing the hexagonal wurtzite structure of ZnO. The films prepared under high vacuum had more oxygen vacancy defects The charge-transfer properties of Co-L and OK edges were investigated by resonance inelastic X-ray scattering. The results show that the charge transfer between Co-3d and conduction electrons in Zn0.94Co0.05Al0.01O thin films is obviously stronger than that of Zn0. 95Co0.05O thin films, Zn0.95Co0.05O thin films prepared at lower oxygen partial pressure have stronger charge transfer strength than those prepared under high oxygen partial pressure.