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最近,日本三井金属矿业公司报道了以非破坏方式研制检验硅片内部缺陷的方法。目前,该公司作为检测、分析硅片内部的微缺陷(直径为几百纳米)系统正在出售BMD分析器,在日本国内外已获很高评价。若上述方法被实用化成功,就能够在非破坏、无接触的状态下检验硅片,并能在生产硅片的流水线上采用。按照上述所研制的方法,由于在显微镜下采用新的固体激光来观察硅片,可获得以前观察有困难的硅片表面附近及深度方向任意断面上的缺陷图象信息。即使观察断面也无须解理硅片,所以还可观察正在器件图形
Recently, Mitsui Metals and Mining Company of Japan reported a non-destructive way to develop a method of inspecting defects in silicon wafers. Currently, the company is in the process of testing and analyzing micro-defects (hundreds of nanometers in diameter) inside silicon wafers. The system is selling BMD analyzers and has been highly praised both in Japan and abroad. If the above method is successfully applied, the silicon wafer can be inspected in a non-destructive and non-contact state and can be adopted in the production line of the silicon wafer. According to the method developed above, since the silicon wafer is observed under a microscope using a new solid-state laser, defective image information on an arbitrary cross-section near the surface of the silicon wafer and in the depth direction which has previously been observed with difficulty can be obtained. It is also possible to observe the device pattern even if it is not necessary to cleave the wafer even if the section is observed