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研制了一种采用氮化硅/二氧化硅/氮化硅复合膜作为支持薄膜的高Q薄膜体声波谐振器.当采用单层氮化硅膜或二氧化硅膜作为谐振器的支持薄膜时,由于残余应力的作用,释放完的薄膜往往会出现褶皱的现象,极大地降低了薄膜体声波谐振器的Q值;上述复合膜结构有效地解决了这个问题.采用直流磁控溅射法制备了氧化锌压电薄膜,X射线衍射结果表明制备的氧化锌薄膜具有很好的c轴择优取向,意味着氧化锌薄膜具有较好的压电性.S参数测试结果表明该薄膜体声波谐振器在0.4~2.6GHz的频率范围内具有3个明显的谐振模式,计算了这些谐振模式的串联谐振频率、并联谐振频率、有效机电耦合系数和Q值.在这3个模式中,第3个谐波模式的工作频率约为2.4GHz,具有最高的Q值(约为500),可用来制备2.4GHz的低相噪射频振荡源.
A high-Q bulk acoustic wave resonator using a silicon nitride / silicon dioxide / silicon nitride composite film as a supporting film has been developed. When a single-layer silicon nitride film or a silicon dioxide film is used as the supporting film of the resonator , Due to residual stress, the release of the finished film tend to fold phenomenon, which greatly reduces the Q value of the bulk acoustic resonator. The composite membrane structure effectively solve this problem. DC magnetron sputtering prepared The results of X-ray diffraction show that the ZnO thin film has a good c-axis preferred orientation, which means the zinc oxide thin film has good piezoelectricity.The results of S parameter test show that the thin film bulk acoustic resonator In the frequency range from 0.4 to 2.6 GHz, there are three obvious resonant modes, and the series resonant frequency, the parallel resonant frequency, the effective electromechanical coupling coefficient and the Q value of these resonant modes are calculated. Among the three modes, the third harmonic Wave mode operating frequency of about 2.4GHz, with the highest Q (about 500), can be used to prepare 2.4GHz low-phase noise radio frequency oscillation source.