Evaluation of light extraction efficiency for the light-emitting diodes based on the transfer matrix

• 作 者: 安平博 王莉 路红喜 于治国 刘磊 席鑫 赵丽霞 王军喜 李晋闽
• 机 构: Semiconductor Lighting Research & Development Center, Institute of Semiconductors, Chinese Academy o
• 出 处: Journal of Semiconductors
• 发表日期: 2016年06期
• 关键词: tracing Figure recombination interfaces multilayer dipole illumination luminous

The internal quantum efficiency(IQE) of the light-emitting diodes can be calculated by the ratio of the external quantum efficiency(EQE) and the light extraction efficiency(LEE).The EQE can be measured experimentally,but the LEE is difficult to calculate due to the complicated LED structures.In this work,a model was established to calculate the LEE by combining the transfer matrix formalism and an in-plane ray tracing method.With the calculated LEE,the IQE was determined and made a good agreement with that obtained by the ABC model and temperature-dependent photoluminescence method.The proposed method makes the determination of the IQE more practical and conventional.

The internal quantum efficiency (IQE) of the light-emitting diodes can be calculated by the ratio of the external quantum efficiency (EQE) and the light extraction efficiency (LEE). The EQE can be measured experimentally, but the LEE is difficult to calculate due to the complicated LED structures.In this work, a model was established to calculate the LEE by combining the transfer matrix formalism and an in-plane ray tracing method. Where the calculated LEE, the IQE was determined and made a good agreement with that obtained by the ABC model and temperature-dependent photoluminescence method. proposed method makes the determination of the IQE more practical and conventional.