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本文提出了另一种新的对样品实行空间调制的微分反射光谱技术．文中给出了实验方法，讨论了调制机理，指出即使纯的体材料表面未经不均匀性处理，该方法也可直接给出其能隙大小，对GaAs的实验结果说明了这一观点．本文还分析了微分反射方法研究量子阱超晶格等薄膜半导体材料时的物理机理，给出并解释了InGaAs／GaAs单量子阱，AlGaAs／GaAsHBT等材料的微分反射谱．为了比较起见，文中还对照给出了每一样品的光调制反射谱．
In this paper, another new differential reflectance spectroscopy technique is proposed to spatially modulate the sample. The experimental method is presented in this paper. The modulation mechanism is discussed. It is pointed out that the energy gap size can be directly obtained even if the surface of pure bulk material is not treated by inhomogeneity. The experimental results on GaAs illustrate this view. In this paper, we also analyze the physical mechanism of the differential reflection method in the investigation of thin film semiconductor materials such as quantum well superlattices, and give and explain the differential reflection spectra of InGaAs / GaAs single quantum wells, AlGaAs / GaAs HBT materials. For the sake of comparison, the light-modulated reflectance spectrum of each sample is also given in comparison.