Organic thin film field-effect transistors based on pentacene have been fabricated by the method of fullyevaporation. The present device with a thin insulator l
Nanocrystalline VO2 films with phase transition temperature 34℃ have been fabricated on Si3N4-film-coated silicon and quartz substrates by argon-annealing film
The analytic expressions of radial matrix elements , and in a finite square-well potential are derived. Based on these analytic expressions of radial matrix el