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在高温条件下,SiC功率器件拥有极具潜力的应用前景。为实现安全可靠的Si C金属–氧化层半导体场效应晶体管(metal-oxide-semiconductor field-effect transistor,MOSFET)高温驱动技术,利用现有商业化的200℃高温元件,提出一种基于离散器件的带欠压锁定(under voltage lock out,UVLO)的高温栅极驱动电路。通过对比所提出的离散器件解决方案与现有集成电路解决方案,说明采用离散器件设计的可行性。最后,PSpice仿真验证该驱动电路在180℃条件下的高温运行特性,获得了较为理想的效果。
Under high temperature conditions, SiC power devices have great potential applications. In order to realize the safe and reliable high-temperature driving technology of Si-metal-oxide-semiconductor field-effect transistor (MOSFET), a 200-degree-temperature high- High temperature gate drive with under voltage lock out (UVLO). By comparing the proposed discrete device solutions with existing integrated circuit solutions, the feasibility of using discrete device designs is demonstrated. Finally, PSpice simulation verifies the driving circuit at 180 ℃ high temperature operating characteristics, obtained a more satisfactory results.