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(Hg,Cd)Te光电器件的表面钝化工艺,特别是俘获电荷密度必须小于10~(11)cm~(-2)的长波光电二极管的有效钝化工艺,已探索了很长时间。这里存在两个难题:一是该材料对物理、化学处理的灵敏度问题,这将导致(Hg,Cd)Te表面化学配比发生变化和引起机械损伤;另一问题是它的热稳定性,这迫使我们进行低温钝化。很多资料证明,阳极化处理引起不能接受的高的固定电荷密度(～10~(12)cm~(-2)),这可能与半导体界面处发现的损伤层有关。本文简要介绍了这种或其他种类钝化剂的性质。
Surface passivation of (Hg, Cd) Te optoelectronic devices has been explored for a long time, especially for efficient passivation of long wavelength photodiodes that capture charge densities of less than 10 ~ (11) cm ~ (-2). There are two problems here. One is the sensitivity of the material to physical and chemical treatments, which leads to a change in the chemical composition of (Hg, Cd) Te and mechanical damage. Another is the thermal stability of Forced us to low temperature passivation. Numerous data demonstrate that anodizing treatment causes unacceptably high fixed charge density (~ 10 ~ (12) cm ~ (-2)), which may be related to the damaged layer found at the semiconductor interface. This article briefly describes the nature of this or other types of passivators.