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HgCdTe已经成为许多电光系统研制与生产所选用的探测器材料,这些电光系统的应用覆盖 2～16μm红外光谱,工作温度在300 K～40 K范围,背景通量为10~(18)～10~(12)光子/cm~2s。这种成功的基础是,用于制作这些探测器的HgCdTe材料在不断发展和完善。本文对用于描述p~+在n上的HgCdTe二极管的漏泄电流、信号电流及电容的表达式作了分析,以便确定一些重要的材料特性及这些材料特性对最后制成的探测器的性能的影响。为了达到理想的性能,除了寿命、掺杂密度、迁移率和组分之外,还必须对吸收层内的组分渐变加以控制。像尺寸和均匀性之类的参数是同样重要的,为了符合红外焦平面列阵的成本目标,必须重视这些参数。此外,还必须注意,降低红外焦平面列阵成本不能以降低材料质量为代价,因为这样做很可能会产生相反的作用。
HgCdTe has become the detector material used in the development and production of many electro-optical systems. The application of these electro-optical systems covers the infrared spectrum of 2-16 μm, the working temperature is in the range of 300 K to 40 K, the background flux is 10-18, (12) photons / cm ~ 2s. The basis for this success is the continuous development and improvement of HgCdTe materials used to make these detectors. The expressions used to describe the leakage current, signal current, and capacitance of a HgCdTe diode with p ~ + over n are analyzed in this paper to determine some important material properties and the properties of these materials for the final fabricated detector influences. In order to achieve the desired properties, in addition to lifetime, doping density, mobility and composition, the grading of the components in the absorber layer must be controlled. Parameters such as size and uniformity are just as important, and in order to meet the cost goals of IRFPA, these parameters must be emphasized. In addition, it must be noted that reducing the cost of the IRFPA can not come at the expense of material quality, as doing so is likely to have the opposite effect.