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本文报道了ＧａＡｓ／ＧａＡｌＡｓ多量子阱（ＭＱＷ）双区共腔（ＣＣＴＳ）结构的双稳态激光器．该器件利用多次离子注入形成电隔离很好的双电极结构，吸收区上加上一定反偏电压时得到了双稳特性，观察到了器件工作于双稳态时对光谱边模的显著抑制．
In this paper, a bistable laser with GaAs / GaAlAs multiple quantum well (MQW) dual-region common-cavity (CCTS) structure has been reported. The device uses multiple ion implantation to form a well-isolated two-electrode structure. The bistable property is obtained when a certain reverse bias voltage is applied to the absorption region. A significant suppression of the spectral side mode is observed when the device operates in the bistable state.