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用两次液相外延的方法制备了 1.55μm掩埋条型 InGaAsP/InP双异质结激光器.室温下的阈电流低达55mA.在接近3格阈值时,器件的光强-电流特性仍保持良好的线性度.直到1.6倍阈值时仍可得到稳定的单纵模、基横模工作.
A 1.55μm buried InGaAsP / InP double heterostructure laser was fabricated by two liquid-phase epitaxy methods. The threshold current was as low as 55mA at room temperature. The intensity-current characteristics of the devices remained good near 3-cell threshold Linearity until the 1.6 times the threshold can still get a stable single longitudinal mode, the basic horizontal mode of work.